I would like to look closer the influence of film thickness and annealing temperature on the obtained microstructure (particles geometry) and optical properties.

For that purpose I prepared poliched silicon wafers and microscope base glass. Those substrates were cut and cleaned with isopropanol and acetone. Next silicon wafers were passivated. Passivation is process of thermal surface oxidation realized in 850 Celsius degrees in oxygen atmosphere. After 15 minutes about 20nm thick layer of silicon dioxide occur at the surface and act as seperation layer between metal nanoparticles and semiconductor surface.

Subsequently on those substrate silver film of thickness 11,14,17 and 20 nm was sputtered. Samples with each thickness was annealed at the 200, 300 and 400 Celsius degrees for 1 hour.

For internal stress determinstion I try to apply XRD methods.

Obtained samples will be examined with SEM and AFM for microstructure description. Optical properties investigation will include diffused and specular reflectance and transmission measurements